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Rjh60f7 datasheet

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Preliminary Datasheet RJH60F7ADPK

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Rjh60f7 datasheet

The specifications of JAGASM - IC Components

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Rjh60f7 datasheet

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WebRJH60F7 PDF 数据手册 : Renesas -Silicon N Channel IGBT / High Speed Power Switching / TO-3P Package , ... RJH60F7 Datasheet PDF: 1. Low collector to emitter saturation voltage 2. Built in fast recovery diode in one package 3. Trench gate and thin wafer technology 4. WebRJH60F7 PDF 数据手册 : Renesas -Silicon N Channel IGBT / High Speed Power Switching / TO-3P Package , ... RJH60F7 Datasheet PDF: 1. Low collector to emitter saturation …

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WebPreliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE (sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High. Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT ...

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